THE COUPLING BETWEEN QUASI-LOCALIZED STATES IN SEMICONDUCTOR DOUBLE-QUANTUM BARRIERS

Citation
Eh. Lee et al., THE COUPLING BETWEEN QUASI-LOCALIZED STATES IN SEMICONDUCTOR DOUBLE-QUANTUM BARRIERS, Solid state communications, 107(4), 1998, pp. 177-181
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
107
Issue
4
Year of publication
1998
Pages
177 - 181
Database
ISI
SICI code
0038-1098(1998)107:4<177:TCBQSI>2.0.ZU;2-P
Abstract
The interaction between above-barrier states quasilocalized in barrier layers was studied in a double quantum barrier configuration. Optical transmission experiments were performed on type-II CdSe/ZnTe samples, in which the valence band has a double-barrier structure. Numerical s tudies reveal a change of symmetry for the coupled quasilocalized stat es, as a function of the separation between the two barriers. Conseque ntly, the strongest optical transition occurs between different pairs of states as the barrier separation changes. The behavior is illustrat ed by both experimental and numerical results. (C) 1998 Elsevier Scien ce Ltd. All rights reserved.