OXYGENE REACTIVE ION-BEAM ETCHING IN POLY MER OPTOELECTRONICS

Authors
MOUSSANT C LUCAS B RATIER B MOLITON A FRANCOIS B
Citation
C. Moussant et al., OXYGENE REACTIVE ION-BEAM ETCHING IN POLY MER OPTOELECTRONICS, Journal de chimie physique et de physico-chimie biologique, 95(6), 1998, pp. 1483-1486
Citations number
4
Categorie Soggetti
Biology,"Chemistry Physical
Journal title
Journal de chimie physique et de physico-chimie biologique → ACNP
Volume
95
Issue
6
Year of publication
1998
Pages
1483 - 1486
Database
ISI
SICI code
Abstract
Reactive Ion Beam Etching (RIBE) of a fluorinated polyimide (6FDA-ODA) has been achieved with Oxygene ions, A 5 keV and 0.5 mA/cm(2) ion bea m leads to a 500 Angstrom/mn sputtering speed of the material, A simil ar behaviour was also observed in the case of PPP.