BAND OFFSETS IN IN0.15GA0.85AS GAAS AND IN0.15GA0.85AS/AL0.15GA0.85ASSTUDIED BY PHOTOLUMINESCENCE AND CATHODOLUMINESCENCE/

Authors
GOLDYS EM ZUO HY TANSLEY TL PHILLIPS MR CONTESSA CM
Citation
Em. Goldys et al., BAND OFFSETS IN IN0.15GA0.85AS GAAS AND IN0.15GA0.85AS/AL0.15GA0.85ASSTUDIED BY PHOTOLUMINESCENCE AND CATHODOLUMINESCENCE/, Superlattices and microstructures, 23(6), 1998, pp. 1223-1226
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
23
Issue
6
Year of publication
1998
Pages
1223 - 1226
Database
ISI
SICI code
0749-6036(1998)23:6<1223:BOIIGA>2.0.ZU;2-D
Abstract
Photoluminescence and cathodoluminescence measurements of strained und oped Ino.lj Ga0.85As/GaAs and In0.15Ga0.85As/Al0.15Ga0.85As quantum we ll structures with emission lines attributed to the first electron-fir st heavy hole and first electron-first light hole excitonic transition s have been analysed theoretically within the eight-band effective mas s approximation. For In0.15Ga0.85As/GaAs the results are consistent wi th either type I or type II alignment of the light hole band. In the c ase of In0.15Ga0.85As/Al0.15Ga0.85As our results indicate type II alig nment for the light hole band and offset ratio of Q = 0.83. (C) 1998 A cademic Press Limited.