HIGH-TEMPERATURE SINGLE-HOLE SILICON TRANSISTORS

Authors
BAGRAEV NT KLYACHKIN LE MALYARENKO AM GEHLHOFF W
Citation
Nt. Bagraev et al., HIGH-TEMPERATURE SINGLE-HOLE SILICON TRANSISTORS, Superlattices and microstructures, 23(6), 1998, pp. 1333-1338
Citations number
2
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
23
Issue
6
Year of publication
1998
Pages
1333 - 1338
Database
ISI
SICI code
0749-6036(1998)23:6<1333:HSST>2.0.ZU;2-V
Abstract
We present high-temperature (77 K, 300 K) single-hole n(+)-p(+)-n tran sistors based on silicon diffusion nanostructures. This is made possib le by utilizing a quantum wire with isolated quantum dots, which is na turally formed inside an ultrashallow p(+)-diffusion profile using non equilibrium diffusion processes. (C) 1998 Academic Press Limited.