TRENDS IN PACKAGING OF HIGH-POWER SEMICONDUCTOR-LASER BARS

Authors
SOLARZ RW EMANUEL MA SKIDMORE JA FREITAS BL KRUPKE WF
Citation
Rw. Solarz et al., TRENDS IN PACKAGING OF HIGH-POWER SEMICONDUCTOR-LASER BARS, Laser physics, 8(3), 1998, pp. 737-740
Citations number
1
Categorie Soggetti
Optics,"Physics, Applied
Journal title
Laser physics → ACNP
ISSN journal
1054660X
Volume
8
Issue
3
Year of publication
1998
Pages
737 - 740
Database
ISI
SICI code
1054-660X(1998)8:3<737:TIPOHS>2.0.ZU;2-4
Abstract
Several different approaches to packaging high power diode laser bars for pumping solid state lasers or for direct diode laser applications are examined. The benefit and utility of each package is strongly depe ndent upon the fundamental optoelectronic properties of the individual diode laser bars. Factors which influence these properties are outlin ed and comparisons of packaging approaches for these materials are mad e.