PREPARATION AND CHARACTERIZATION OF CDO FILMS DEPOSITED BY DC MAGNETRON REACTIVE SPUTTERING

Citation
Tk. Subramanyam et al., PREPARATION AND CHARACTERIZATION OF CDO FILMS DEPOSITED BY DC MAGNETRON REACTIVE SPUTTERING, Materials letters, 35(3-4), 1998, pp. 214-220
Citations number
31
Categorie Soggetti
Material Science","Physics, Applied
Journal title
ISSN journal
0167577X
Volume
35
Issue
3-4
Year of publication
1998
Pages
214 - 220
Database
ISI
SICI code
0167-577X(1998)35:3-4<214:PACOCF>2.0.ZU;2-8
Abstract
This paper deals with the de magnetron reactive sputtering of cadmium in an oxygen and argon atmosphere. The dependence of cathode potential on the oxygen partial pressure has been explained in terms of cathode poisoning effects. The cadmium oxide films formed during this process have been studied for their structural, electrical and optical proper ties. At an optimum oxygen partial pressure of 1 x 10(-3) mbar, the fi lms were single phase with polycrystalline in nature. The films showed resistivity of 4.6 x 10(-3) Ohm cm, Hall mobility of 53 cm(2)/V s, ca rrier concentration of 3.5 x 10(19) cm(-3), with an optical transmissi on of 85% in the wavelength range 600-1600 nm and with a band gap of 2 .46 eV. (C) 1998 Elsevier Science B.V. All rights reserved.