Tk. Subramanyam et al., PREPARATION AND CHARACTERIZATION OF CDO FILMS DEPOSITED BY DC MAGNETRON REACTIVE SPUTTERING, Materials letters, 35(3-4), 1998, pp. 214-220
This paper deals with the de magnetron reactive sputtering of cadmium
in an oxygen and argon atmosphere. The dependence of cathode potential
on the oxygen partial pressure has been explained in terms of cathode
poisoning effects. The cadmium oxide films formed during this process
have been studied for their structural, electrical and optical proper
ties. At an optimum oxygen partial pressure of 1 x 10(-3) mbar, the fi
lms were single phase with polycrystalline in nature. The films showed
resistivity of 4.6 x 10(-3) Ohm cm, Hall mobility of 53 cm(2)/V s, ca
rrier concentration of 3.5 x 10(19) cm(-3), with an optical transmissi
on of 85% in the wavelength range 600-1600 nm and with a band gap of 2
.46 eV. (C) 1998 Elsevier Science B.V. All rights reserved.