PLASMA DAMAGE IMMUNITY OF THIN GATE OXIDE CROWN ON VERY LIGHTLY N+ IMPLANTED SILICON

Plasma damage immunity of gate oxide grown on very low dose (2 x 10(13 )/cm(3)) N+ implanted silicon is found to be improved comparing to reg ular gate oxide of similar thickness. Both hole trapping and electron trapping are suppressed by the incorporation of nitrogen into the gate oxide, Hole trapping behavior was determined from the relationship be tween initial electron trapping slope (IETS) and threshold voltage shi fts due to current stress. This method is believed to be far more reli able than the typical method of initial gate voltage lowering during c urrent stress.