POST POLY-SI GATE RAPID THERMAL NITRIDATION FOR BORON PENETRATION REDUCTION AND OXIDE RELIABILITY IMPROVEMENT

Authors
ZHOU ZX TINKLER S SCHRODER DK PAULSEN R DAHL P KEATING R PARK C
Citation
Zx. Zhou et al., POST POLY-SI GATE RAPID THERMAL NITRIDATION FOR BORON PENETRATION REDUCTION AND OXIDE RELIABILITY IMPROVEMENT, IEEE electron device letters, 19(7), 1998, pp. 237-240
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
19
Issue
7
Year of publication
1998
Pages
237 - 240
Database
ISI
SICI code
0741-3106(1998)19:7<237:PPGRTN>2.0.ZU;2-Z
Abstract
Boron penetration from p(+) doped poly-Si gates in PMOSFET is greatly reduced by post poly-Si gate rapid thermal nitridation. Gate oxide rel iability against boron penetration is significantly enhanced. When pos t poly-Si nitridation is combined with N2O annealed gate oxides, gate oxide charge-to-breakdown is markedly improved.