A NOVEL PROCESS TO FORM COBALT SILICIDED P(-SI GATES BY BF2+ IMPLANTATION INTO BILAYERED COSI() POLY)A-SI FILMS AND SUBSEQUENT ANNEAL/

Authors
LAI WK LIU HW JUANG MH CHEN NC CHENG HC
Citation
Wk. Lai et al., A NOVEL PROCESS TO FORM COBALT SILICIDED P(-SI GATES BY BF2+ IMPLANTATION INTO BILAYERED COSI() POLY)A-SI FILMS AND SUBSEQUENT ANNEAL/, IEEE electron device letters, 19(7), 1998, pp. 259-261
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
19
Issue
7
Year of publication
1998
Pages
259 - 261
Database
ISI
SICI code
0741-3106(1998)19:7<259:ANPTFC>2.0.ZU;2-6
Abstract
A novel process that implants BF2+ ions into thin bilayered CoSi/a-Si films has been shown to form cobalt silicided pf poly-Si gates with ex cellent gate oxide integrity and very small flatband shift. The effect s of not only using the CoSi layer as an implantation barrier but also keeping the a-Si underlayer during the initial silicide formation bot h significantly suppress the boron penetration through thin gate oxide .