INFLUENCE OF THE OPERATING TEMPERATURE ON THE DESIGN AND UTILIZATION OF 94-GHZ PULSED SILICON IMPATT DIODES

The RF and thermal behavior of 94-GHz P+PNN+ double drift flat doping profile silicon impact ionization avalanche transit time (IMPATT) diod es far high-power pulsed operation is investigated by means of time do main electrical oscillator models. It is demonstrated that these diode s have a limited optimum temperature range of operation, associated to specific matching and bias conditions, to achieve a stable and high p ower operation. This restriction necessitates a thermal control when t he oscillator must operate over a wide ambient temperature range. High ly doped, short active zone length diodes appear to have the best pote ntial for high power performance.