40GBIT S EAM DRIVER IC IN SIGE BIPOLAR TECHNOLOGY/

Authors
SCHMID R MEISTER TF REST M REIN HM
Citation
R. Schmid et al., 40GBIT S EAM DRIVER IC IN SIGE BIPOLAR TECHNOLOGY/, Electronics Letters, 34(11), 1998, pp. 1095-1097
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
11
Year of publication
1998
Pages
1095 - 1097
Database
ISI
SICI code
0013-5194(1998)34:11<1095:4SEDII>2.0.ZU;2-D
Abstract
An SiGe bipolar IC for directly driving a differential electroabsorpri on modulator in a 40Gbit/s fibre optic TDM system is presented. An adj ustable modulator bias voltage (0 to -2V) is generated on-chip by a no vel active network in the output stage. Clear eye diagrams at 40Gbit/s and output swings up to 2.5V(pp) (nominal 2V(pp)) were measured on mo unted chips.