FRINGING-INDUCED BARRIER LOWERING (FIBL) IN SUB-100NM MOSFETS WITH HIGH-K GATE DIELECTRICS

Authors
YEAP GCF KRISHNAN S LIN MR
Citation
Gcf. Yeap et al., FRINGING-INDUCED BARRIER LOWERING (FIBL) IN SUB-100NM MOSFETS WITH HIGH-K GATE DIELECTRICS, Electronics Letters, 34(11), 1998, pp. 1150-1152
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
11
Year of publication
1998
Pages
1150 - 1152
Database
ISI
SICI code
0013-5194(1998)34:11<1150:FBL(IS>2.0.ZU;2-0
Abstract
Fringing-induced barrier lowering (FIBL), a new anomalous degradation in device turn-off/on characteristics in sub-100nm devices with high-K gate dielectrics, is reported. FIBL is clearly evident fcr K > 25 and worsens as K increases (without buffer oxide). With a buffer oxide, F IBL can lx completely suppressed for K < 25, and partially for higher ii. FIBL worsens as the gate length becomes shorter. Complete removal of high-K dielectrics on the active area induces a smaller FIBL.