Av. Barabanov et al., ABOUT THE MECHANISMS OF SPIN-DEPENDENT RECOMBINATION IN SEMICONDUCTORS, Physica status solidi. b, Basic research, 207(2), 1998, pp. 419-427
Two mechanisms of spin-dependent recombination in semiconductors were
compared in this paper (the first one is well known as the Kaplan-Solo
mon-Mott mechanism, the second one is often referred to as the spin-de
pendent Shockley-Read recombination through the excited triplet states
of localized electron pairs). The applicability of quantum equations
for von Neumann operator to the theoretical description of both mechan
isms was proved. The conditions allowing to give preference to one of
the mechanisms was formulated. The peaks of an electrically detected m
agnetic resonance were computed for both mechanisms.