OPTIMIZATION OF SUBMICROMETER GAAS-MESFET FOR IMPROVED PERFORMANCE

A theoretical and optimal model, based on a trial function approach wi th improved performance for submicrometre gate length devices, is prop osed. This helps in predicting the deviations resulting from process p arameter variations. The main physical phenomena such as field depende nt mobility, overshoot velocity and carrier injection in the buffer la yer are also considered. The extension of the depletion region in the ungated part of the device fully explains transconductance compression . When calculated results from the present model are compared with ava ilable experimental data and numerically simulated results, an encoura ging correspondence between the two is observed, thereby, confirming t he validity of the model.