ELECTRONIC EXCITATION EFFECTS IN ION-IRRADIATED HIGH-T-C SUPERCONDUCTORS

Citation
N. Ishikawa et al., ELECTRONIC EXCITATION EFFECTS IN ION-IRRADIATED HIGH-T-C SUPERCONDUCTORS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 135(1-4), 1998, pp. 184-189
Citations number
18
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
ISSN journal
0168583X
Volume
135
Issue
1-4
Year of publication
1998
Pages
184 - 189
Database
ISI
SICI code
0168-583X(1998)135:1-4<184:EEEIIH>2.0.ZU;2-U
Abstract
We have measured the fluence dependence of the c-axis lattice paramete r in EuBa2Cu3Oy (EBCO) irradiated with various ions from He to Au over the wide energy range from 0.85 MeV to 3.80 GeV. We have observed a l inear increase of the c-axis lattice parameter with increasing fluence for all irradiations. The slope of c-axis lattice parameter against f luence, which corresponds to the defect production rate, is separated into two contributions; the effect via elastic displacement and the ef fect via electronic excitation. The former contribution exhibits a lin ear increase against the nuclear stopping power, S-n. The latter contr ibution is scaled by the primary ionization rate, dJ/dx, rather than b y the electronic stopping power, S-e, and is nearly proportional to (d J/dx)(4). (C) 1998 Elsevier Science B.V.