HEAVY-ION-INDUCED SINGLE EVENT EFFECTS IN SEMICONDUCTOR-DEVICE

Cosmic ray induced single event effects (SEE) on large scale integrate (LSI) circuits have become an important topic being investigated exte nsively by the scientists in spaceborne electronics. This paper presen ts the ground-testing results of these effects on four different devic es used in a satellite. Three of them, Harris 80C86, Intel 8086 and ID T7164SRAM have been tested to suffer single event upset (SEU) and mult iple-bit upsets (MBU) under 2.3 MeV/u Ar ion bombardment. MBU in IDT71 64 SRAM was found to depend on the dose rate. The single event latchup (SEL) in IDT7164 SRAM and XICOR28C64 (EPROM)-P-2 was measured, too. T he results are explained in terms of the mechanism of charge collectio n. SEE data obtained from this work are used to predict the event rate s of the flight devices in space. (C) 1998 Elsevier Science B.V.