Qy. Zhang et al., INVESTIGATION OF THE ENERGETIC DEPOSITION OF AU (001) THIN-FILMS BY MOLECULAR-DYNAMICS SIMULATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 135(1-4), 1998, pp. 289-294
A molecular-dynamics simulation of Au (0 0 1) thin film growth with en
ergetic atoms was carried out. The incident-atom energies were selecte
d as 10.0, 1.0, and 0.1 eV and two kinds of substrate temperatures, 30
0 and 100 K, were selected to study the effect of substrate temperatur
e on film growth. Three kinds of film growth mode, layer-by-layer grow
th, layer-by-layer growth followed by 3-dimensional island formation,
and 3-dimensional island growth, were observed at the condition of 300
K and higher than 1.0 eV incident-atom energy, 300 K and 0.1 eV incid
ent-atom energy, and 100 K and 0.1 eV incident-atom energy, respective
ly. The surface coverage, diffracted intensity, morphology, and interf
ace mixing of Au (0 0 1) film deposited with different incident-atom e
nergy and the atom transport were described. The effects of incident-a
tom energy and substrate temperature on the film growth were also disc
ussed in the article. (C) 1998 Elsevier Science B.V.