STUDY ON NANOSTRUCTURAL MORPHOLOGY OF SI3N4 TIN MULTILAYER SYNTHESIZED BY ION-BEAM-ASSISTED DEPOSITION/

Authors
WANG LD HE JL HE XM WANG J WANG YH LI WZ LI HD
Citation
Ld. Wang et al., STUDY ON NANOSTRUCTURAL MORPHOLOGY OF SI3N4 TIN MULTILAYER SYNTHESIZED BY ION-BEAM-ASSISTED DEPOSITION/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 135(1-4), 1998, pp. 397-400
Citations number
9
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
135
Issue
1-4
Year of publication
1998
Pages
397 - 400
Database
ISI
SICI code
0168-583X(1998)135:1-4<397:SONMOS>2.0.ZU;2-T
Abstract
The structure and morphology of Si3N4/TiN multilayer synthesized by io n beam assisted deposition (IBAD) were studied by X-ray diffraction (X RD), Auger electron spectrum (AES) and Field-emmision scanning electro n microscopy (FESEM). It was found that a well-defined multilayer stru cture was formed. The multilayer was composed of polycrystalline TiN a nd amorphous Si3N4. The compositions were determined as N:Ti = 1 and N :Si = 0.9, respectively. Ion beam etching technique was employed to pr epare special specimen for FESEM morphology observation. Cross-section al FESEM was also conducted. Results showed that the Si3N4 layers cons isted of granular particles of about 100 nm in size and the particles in TiN layers were much smaller. (C) 1998 Elsevier Science B.V.