STRUCTURAL CHARACTERISTICS AND THE CONTROL OF CRYSTALLOGRAPHIC ORIENTATION OF CEO2 THIN-FILMS PREPARED BY LASER-ABLATION

Authors
LI MY WANG ZL FAN SS ZHAO QT XIONG GC
Citation
My. Li et al., STRUCTURAL CHARACTERISTICS AND THE CONTROL OF CRYSTALLOGRAPHIC ORIENTATION OF CEO2 THIN-FILMS PREPARED BY LASER-ABLATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 135(1-4), 1998, pp. 535-539
Citations number
7
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
135
Issue
1-4
Year of publication
1998
Pages
535 - 539
Database
ISI
SICI code
0168-583X(1998)135:1-4<535:SCATCO>2.0.ZU;2-P
Abstract
CeO2 thin films were grown on (1 0 0) silicon substrates by pulsed las er deposition. X-ray diffraction results indicated that fully (1 1 1) oriented and highly (1 0 0) oriented CeO2 films on Si(1 0 0) were achi eved, respectively. Oxygen pressure was found to be important to contr ol the crystallographic orientation. A possible mechanism was proposed to explain these results. Auger electron spectroscopy and Rutherford backscattering spectrometry analysis showed an uniform concentration d istribution of Ce and O throughout the epitaxial layer independent of the oxygen pressure. The electrical properties of the films were chara cterized by capacitance-voltage measurements. (C) 1998 Elsevier Scienc e B.V.