INTERPRETATION OF ION CHANNELING RESULTS FROM EPITAXIAL PT THIN-FILMSAND CO PT MULTILAYERS/

Citation
Pc. Mcintyre et al., INTERPRETATION OF ION CHANNELING RESULTS FROM EPITAXIAL PT THIN-FILMSAND CO PT MULTILAYERS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 214-219
Citations number
15
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
ISSN journal
0168583X
Volume
138
Year of publication
1998
Pages
214 - 219
Database
ISI
SICI code
0168-583X(1998)138:<214:IOICRF>2.0.ZU;2-J
Abstract
Ion channeling was used to characterize the orientation and crystallin e quality of very thin (<40 nm) Pt films and Co/Pt multilayers grown e pitaxially on (0 0 1) MgO single crystal substrates by electron beam e vaporation. Planar channeling measurements were found to be particular ly useful for characterizing the film orientation, and for identifying the structure of ultra-thin Co layers in the multilayers. Comparison of ion channeling and transmission electron microscopy (TEM) results p oints out several potential difficulties in interpreting ion channelin g data in these highly mismatched epitaxial systems. (C) 1998 Publishe d by Elsevier Science B.V.