NUCLEATION AND GROWTH OF PLATELET BUBBLE STRUCTURES IN HE IMPLANTED SILICON

Authors
FICHTNER PFP KASCHNY JR KLING A TRINKAUS H YANKOV RA MUCKLICH A SKORUPA W ZAWISLAK FC AMARAL L DASILVA MF SOARES JC
Citation
Pfp. Fichtner et al., NUCLEATION AND GROWTH OF PLATELET BUBBLE STRUCTURES IN HE IMPLANTED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 460-464
Citations number
11
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
138
Year of publication
1998
Pages
460 - 464
Database
ISI
SICI code
0168-583X(1998)138:<460:NAGOPB>2.0.ZU;2-N
Abstract
He+ ions were implanted into(1 0 0) Si at energies from 30 to 120 keV and fluences from 5 x 10(15) to 1 x 10(16) cm(-2) After implantation, pieces of these samples were subjected to rapid thermal annealing for 600 s at temperatures ranging from 300 degrees C to 700 degrees C, The samples were analyzed by Transmission Electron Microscopy (TEM) and b y Rutherford Backscattering and channeling spectrometry (RBS/C). The T EM observations were related to the RBS/C measurements and the results discussed in terms of a nucleation model to explain the formation of overpressurized bubbles in He implanted and annealed silicon. (C) 1998 Published by Elsevier Science B.V.