ANNEALING BEHAVIOR AND RANGES OF IMPLANTED IONS IN III-V AND II-VI COMPOUND SEMICONDUCTOR-MATERIALS

Annealing behaviour and ranges of 15-40 keV (doses of 10(15)-10(16) cm (-2)) C-13(+) and F-19(+) ions implanted in InP, C-13(+), N-15(+) and Si-30(+) in GaAs and N-15(+) in ZnSSe have been investigated. Ion dist ributions were measured by the nuclear resonance broadening technique by taking advantage of narrow resonances in (p,gamma) and (p,alpha gam ma) reactions. Annealing of samples was carried out both in Ar atmosph ere and in vacuum at temperatures from 300 degrees C to 950 degrees C. Trapping of carbon in InP and GaAs and of nitrogen in GaAs was observ ed. Surface enrichment was observed in case of silicon implanted GaAs and nitrogen in ZnSSe. Loss of fluorine in InP was found at temperatur es above 350 degrees C in 30 min annealings. Range parameters from the deconvoluted depth profiles were determined and compared with semiemp irical calculations. (C) 1998 Elsevier Science B.V.