Na. Sobolev et al., ION-BEAM-INDUCED STRUCTURAL TRANSFORMATIONS IN SIMGEN SUPERLATTICES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1057-1061
Si6Ge4 and Si9Ge6 superlattices (SLs) have been implanted with 100 keV
Si+ and 150 keV Ar+ ions, respectively, and they have been subsequent
ly annealed, Raman and low temperature photoluminescence (PL) spectra
are measured. A total breakdown of the SL structure and a transformati
on of the SLs into an alloy are observed in the course of annealing at
temperatures much lower than those typical of the intermixing of as-g
rowth SLs. The effect is explained by defect-enhanced diffusion. (C) 1
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