A COMPARISON BETWEEN THE USE OF EBIC AND IBIC MICROSCOPY FOR SEMICONDUCTOR DEFECT ANALYSIS

Authors
BREESE MBH AMAKU A WILSHAW PR
Citation
Mbh. Breese et al., A COMPARISON BETWEEN THE USE OF EBIC AND IBIC MICROSCOPY FOR SEMICONDUCTOR DEFECT ANALYSIS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1355-1360
Citations number
16
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
138
Year of publication
1998
Pages
1355 - 1360
Database
ISI
SICI code
0168-583X(1998)138:<1355:ACBTUO>2.0.ZU;2-E
Abstract
The use of 3 MeV protons for ion beam induced charge (IBIC) and 15 keV electrons for electron beam induced current (EBIC) microscopy to imag e MeV proton induced defects in silicon are compared here. It is shown that IBIC is considerably more sensitive to the detection of very dee p defects because of the greater range of 3 MeV protons compared with 15 keV electrons. An analysis based on the different ranges of the two charged particles is used to calculate the difference in defect contr ast, and good quantitive agreement is shown with measured contrast val ues. (C) 1998 Elsevier Science B.V.