FABRICATION OF INDIUM ARSENIC-ANTIMONY-BISMUTHIDE MULTILAYER HETEROSTRUCTURES BY CAPILLARY LIQUID-PHASE EPITAXY

Authors
AKCHURIN RK ZHEGALIN VA SAKHAROVA TV SEREGIN SV
Citation
Rk. Akchurin et al., FABRICATION OF INDIUM ARSENIC-ANTIMONY-BISMUTHIDE MULTILAYER HETEROSTRUCTURES BY CAPILLARY LIQUID-PHASE EPITAXY, Technical physics letters, 23(4), 1997, pp. 274-275
Citations number
8
Journal title
Technical physics letters → ACNP
ISSN journal
10637850
Volume
23
Issue
4
Year of publication
1997
Pages
274 - 275
Database
ISI
SICI code
1063-7850(1997)23:4<274:FOIAMH>2.0.ZU;2-W
Abstract
Low-temperature ''capiliary'' liquid-phase epitaxy is used to grow InA s1-x-ySbxBiy/InSb1-yBiy multilayer epitaxial heterostructures on InSb( 111)A substrates. The heterostructures contained up to sixty epitaxial layers of thickness between 0.05 and 0.15 mu m, which was controlled by the epitaxial growth conditions. The heterostructures were investig ated by scanning electron microscopy and secondary-ion mass spectromet ry, and results rue presented. (C) 1997 American Institute of Physics. [S1063-7850(97)00904-X].