ALGAAS GAAS-HETEROSTRUCTURE CW LASER-DIODES WITH A WORKING OUTPUT OPTICAL POWER OF 3 W (LAMBDA=0.81-MU-M) AND AN OPERATING LIFE OF 2000 HOURS/

Authors
DEMIDOV DM KATSAVETS NI LEUS RV TERMARTIROSYAN AL CHALYI VP
Citation
Dm. Demidov et al., ALGAAS GAAS-HETEROSTRUCTURE CW LASER-DIODES WITH A WORKING OUTPUT OPTICAL POWER OF 3 W (LAMBDA=0.81-MU-M) AND AN OPERATING LIFE OF 2000 HOURS/, Technical physics letters, 23(4), 1997, pp. 331-332
Citations number
5
Journal title
Technical physics letters → ACNP
ISSN journal
10637850
Volume
23
Issue
4
Year of publication
1997
Pages
331 - 332
Database
ISI
SICI code
1063-7850(1997)23:4<331:AGCLWA>2.0.ZU;2-M
Abstract
Quantum-well AlGaAs/GaAs heterostructures with separate confinement ha ve been used to fabricate laser diodes emitting at 0.81 mu m, with a c w output optical power of 4 W and an operating life of more than 2000 h at a power of 3 W and a temperature of +20 degrees C. (C) 1997 Ameri can Institute of Physics. [S1063-7850(97)03204-7].