ELECTROLUMINESCENCE AND CURRENT-VOLTAGE CHARACTERISTICS OF N-TYPE POROUS SILICON STRUCTURES

Authors
BUCHIN EY LAPTEV NA PROKAZNIKOV AV RUD NA SVETOVOI VB CHIRKOV AN
Citation
Ey. Buchin et al., ELECTROLUMINESCENCE AND CURRENT-VOLTAGE CHARACTERISTICS OF N-TYPE POROUS SILICON STRUCTURES, Technical physics letters, 23(6), 1997, pp. 445-447
Citations number
14
Journal title
Technical physics letters → ACNP
ISSN journal
10637850
Volume
23
Issue
6
Year of publication
1997
Pages
445 - 447
Database
ISI
SICI code
1063-7850(1997)23:6<445:EACCON>2.0.ZU;2-M
Abstract
An investigation is made of a set of n-type porous-silicon structures exhibiting high electroluminescence efficiency and low degradation, an d results are presented. These results demonstrate that operating volt ages corresponding to those of standard ceramic-metal-oxide-semiconduc tor technology can realistically be achieved. (C) 1997 American Instit ute of Physics. [S1063-7850(97)01306-2].