BOLOMETRIC PROPERTIES OF SILICON THIN-FILM STRUCTURES FABRICATED BY PLASMACHEMICAL VAPOR-PHASE DEPOSITION

Authors
ZEROV VY KULIKOV YV MALYAROV VG FEOKTISTOV NA KHREBTOV IA
Citation
Vy. Zerov et al., BOLOMETRIC PROPERTIES OF SILICON THIN-FILM STRUCTURES FABRICATED BY PLASMACHEMICAL VAPOR-PHASE DEPOSITION, Technical physics letters, 23(6), 1997, pp. 481-483
Citations number
7
Journal title
Technical physics letters → ACNP
ISSN journal
10637850
Volume
23
Issue
6
Year of publication
1997
Pages
481 - 483
Database
ISI
SICI code
1063-7850(1997)23:6<481:BPOSTS>2.0.ZU;2-3
Abstract
A method of fabricating uncooled thermally sensitive sandwich structur es based on amorphous hydrated silicon films is discussed and experime ntal results are reported. The structures have an area of 10(-4) cm(2) , a resistance of congruent to 10 k Ohm, and a temperature coefficient of resistance similar or equal to 2%/K. At 30 Hz and a current of sim ilar or equal to 1 mu A, the excess noise exceeds the thermal resistan ce noise by a factor of 1.7. (C) 1997 American Institute of Physics. [ S1063-7850(97)02706-7].