FLUX MONITORING AND CONTROL IN EPITAXY BY CHEMICAL-VAPOR-DEPOSITION

Authors
PEARSALL TP BROWN N RICKER NL JOHNSON M
Citation
Tp. Pearsall et al., FLUX MONITORING AND CONTROL IN EPITAXY BY CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 188(1-4), 1998, pp. 63-68
Citations number
7
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
188
Issue
1-4
Year of publication
1998
Pages
63 - 68
Database
ISI
SICI code
0022-0248(1998)188:1-4<63:FMACIE>2.0.ZU;2-9
Abstract
Atomic fluorescence spectroscopy is a promising technique to detect in dividual chemical species at typical growth pressures in chemical beam and metal-organic epitaxy. We report results of initial experiments t o measure triethyl gallium and dimethylethylamine-alane. We have succe ssfully detected both species, but further development is needed to ad apt this measurement to the needs of real-time sensing and control in chemical beam epitaxy. (C) 1998 Elsevier Science B.V. All rights reser ved.