HIGH-TEMPERATURE HIGH-DOSE IMPLANTATION OF N-SIC( AND AL+ IONS IN 6H)

A series of experimental and theoretical investigations has been initi ated for 6H-SiC samples sequentially implanted with high doses of N+(6 5 keV) + N+(120 keV) + Al+(100 keV) + Al+(160 keV) ions at temperature s between 200 and 800 degrees C. Nitrogen and carbon distribution prof iles are measured by ERD and structural defect distributions are measu red by Rutherford backscattering with channeling. A comparison between the experimental data and the results of computer simulation yields a physical model to describe the relaxation processes of the implanted SiC structure, where the entire implanted volume is divided into regio ns of different depth, having different guiding kinetics mechanisms. ( C) 1997 American Institute of Physics. [S1063-7850(97)01908-3].