INVESTIGATION OF THE PHOTOLUMINESCENCE AND MODIFICATION OF INGAP GAAS/INGAAS HETEROSTRUCTURES BY NEAR-FIELD SCANNING MICROSCOPY/

This study deals with the local spectroscopy and modification of semic onducting InGaP/GaAs/ InGaAs quantum-well heterostructures by near-hel d scanning optical microscopy. The spatial distribution of the photolu minescence intensity in these structures is investigated and spatial n onuniformity of the photoluminescence is observed as a result of the n onuniform properties of the InGaP layers. It is shown for the first ti me that local quenching of the photoluminescence may be achieved by op tically induced impurity diffusion near the quantum well, and this may be utilized to develop low-dimension semiconducting devices. (C) 1997 American Institute of Physics. [S1063-7850(97)02108-3].