PHASE EFFECTS IN A SEMICONDUCTOR-LASER WITH DIFFRACTION EXTRACTION OFRADIATION

Authors
KALITEEVSKII MA PORTNOI EL SOKOLOVSKII GS
Citation
Ma. Kaliteevskii et al., PHASE EFFECTS IN A SEMICONDUCTOR-LASER WITH DIFFRACTION EXTRACTION OFRADIATION, Technical physics letters, 23(9), 1997, pp. 699-700
Citations number
11
Journal title
Technical physics letters → ACNP
ISSN journal
10637850
Volume
23
Issue
9
Year of publication
1997
Pages
699 - 700
Database
ISI
SICI code
1063-7850(1997)23:9<699:PEIASW>2.0.ZU;2-I
Abstract
Phase effects arising in a semiconductor laser with diffraction extrac tion of radiation and a distributed Bragg reflector on the substrate s ide are taken into account exactly quantitatively and the possibilitie s of using these effects in lasers is analyzed. It is shown that the p hase effects studied can be used to increase the laser efficiency subs tantially. (C) 1997 American Institute of Physics. [S1063-7850(97)0170 9-6].