ACTIVATION-ENERGY OF ELECTRON-STIMULATED QUENCHING OF THE PHOTOLUMINESCENCE OF N-TYPE POROUS SILICON

Authors
KOSTISHKO BM ORLOV AM FROLOV VA
Citation
Bm. Kostishko et al., ACTIVATION-ENERGY OF ELECTRON-STIMULATED QUENCHING OF THE PHOTOLUMINESCENCE OF N-TYPE POROUS SILICON, Technical physics letters, 23(9), 1997, pp. 714-716
Citations number
11
Journal title
Technical physics letters → ACNP
ISSN journal
10637850
Volume
23
Issue
9
Year of publication
1997
Pages
714 - 716
Database
ISI
SICI code
1063-7850(1997)23:9<714:AOEQOT>2.0.ZU;2-0
Abstract
The degradation of photoluminescence of porous silicon by kilovolt ele ctrons and the mechanism and activation energy of this process have be en investigated. Quantitative relations between the integral intensity of the photoluminescence and the irradiation dose and substrate tempe rature are obtained. The mechanism of the process is discussed and its activation energy is determined. (C) 1997 American Institute of Physi cs. [S1063-7850(97)02309-4].