POSSIBLE FORMATION OF BACEO3 DURING DEPOSITION OF YBA2CU3O7-X FILMS ON THE SURFACE OF CERIUM OXIDE

Authors
MASHTAKOV AD KOTELYANSKII IM LUZANOV VA MOZHAEV PB OVSYANNIKOV GA BDIKIN ID
Citation
Ad. Mashtakov et al., POSSIBLE FORMATION OF BACEO3 DURING DEPOSITION OF YBA2CU3O7-X FILMS ON THE SURFACE OF CERIUM OXIDE, Technical physics letters, 23(10), 1997, pp. 738-740
Citations number
6
Journal title
Technical physics letters → ACNP
ISSN journal
10637850
Volume
23
Issue
10
Year of publication
1997
Pages
738 - 740
Database
ISI
SICI code
1063-7850(1997)23:10<738:PFOBDD>2.0.ZU;2-1
Abstract
Results are presented from an experimental study of the crystallograph ic parameters of 1 (1) under bar 02Al(2)O(3)/(001)CeO2/(001)YBa2Cu3O7- x film heterostructures fabricated by cathode sputtering at high subst rate temperatures T=600-800 degrees C. It is shown that the main limit ation on the temperature for deposition of a YBa2Cu3O7-x film on a CeO 2 surface is due to the chemical interaction between YBa2Cu3O7-x and C eO2 to form a polycrystalline BaCeO3 layer. (C) 1997 American Institut e of Physics.