LONG-RANGE EFFECTS IN ION-IMPLANTED SILICON-SILICON-DIOXIDE STRUCTURES

The properties of electrically active centers formed in Si-SiO2 struct ures as a result of argon ion implantation in the oxide layer ate inve stigated, along with the processes of defect formation in the ion-impl anted structures due to subsequent, less-energetic, external (e.g., fi eld) influences. The investigations are carried out by electrophysical and electroluminescence methods in an electrolyte-insulator-semicondu ctor system at room temperature. It is established that argon ion impl antation in the bulk of the oxide layer leads to the formation of elec trically active centers outside the zone of localization of the implan ted argon ions, and a model of their formation is proposed. (C) 1997Am erican Institute of Physics. [S1063-7850(97)02210-6].