NONEQUILIBRIUM PROCESSES IN HG1-XCDXTE N(-P JUNCTIONS IN A MAGNETIC-FIELD())

The results of measurements of the relaxation and current-voltage char acteristics of Hg1-xCdxTe n(+) - p junctions in a magnetic field are p resented. It is shown that the lifetime of the nonequilibrium electron s in the p-type region undergoes an increase in a magnetic field, whic h can be associated with the heterogeneous distribution of defects fro m the junction boundary. The current-voltage characteristics in a magn etic held exhibit suppression of the diffusion component of the curren t and an increase in the contribution of the generation-recombination channel, as well as the appearance of shunting channels, which are ass ociated with the influence of the surface. (C) 1997 American Institute of Physics. [S1063-7850(97)03310-7].