INVESTIGATION OF IMPLANTED LAYERS IN SILICON-CARBIDE BY A MODULATION PHOTOREFLECTION METHOD

Authors
WALTHER HG KARGE H MURATIKOV KL SUVOROV AV USOV IO
Citation
Hg. Walther et al., INVESTIGATION OF IMPLANTED LAYERS IN SILICON-CARBIDE BY A MODULATION PHOTOREFLECTION METHOD, Technical physics letters, 23(7), 1997, pp. 500-503
Citations number
22
Journal title
Technical physics letters → ACNP
ISSN journal
10637850
Volume
23
Issue
7
Year of publication
1997
Pages
500 - 503
Database
ISI
SICI code
1063-7850(1997)23:7<500:IOILIS>2.0.ZU;2-N
Abstract
The possibility of using a modulation photoreflection method for diagn ostics of ion-implanted layers in silicon carbide is considered. It is shown that the photoreflection method can be used to determine the la yer thickness and also the variation in the optical parameters of the layer as a function of the implanted ion dose. (C) 1997 American Insti tute of Physics. [S1063-7850(97)00307-8].