MONTE-CARLO CALCULATION OF THE LOW-TEMPERATURE MOBILITY OF 2-DIMENSIONAL ELECTRONS IN A QUANTUM-WELL IN A SELECTIVELY DOPED GAAS-BASED HETEROSTRUCTURE

Authors
BORZDOV VM MULYARCHIK SG KHOMICH AV
Citation
Vm. Borzdov et al., MONTE-CARLO CALCULATION OF THE LOW-TEMPERATURE MOBILITY OF 2-DIMENSIONAL ELECTRONS IN A QUANTUM-WELL IN A SELECTIVELY DOPED GAAS-BASED HETEROSTRUCTURE, Technical physics letters, 23(12), 1997, pp. 935-937
Citations number
13
Journal title
Technical physics letters → ACNP
ISSN journal
10637850
Volume
23
Issue
12
Year of publication
1997
Pages
935 - 937
Database
ISI
SICI code
1063-7850(1997)23:12<935:MCOTLM>2.0.ZU;2-Y
Abstract
The feasibility of Monte Carlo calculations of the mobility of two-dim ensional electrons in a square quantum well in GaAs/AlGaAs heterostruc tures in a low electric field E = 100 V/m is demonstrated and results are presented for temperatures of 4.2 and 77 K. The dependence of the mobility on the width of the potential well and on the surface density of charge carriers is determined. (C) 1997American Institute of Physi cs. [S1063-7850(97)01412-2].