NEW STRUCTURAL MODEL FOR THE SI(111)4X1 - IN RECONSTRUCTION

Authors
SARANIN AA ZOTOV AV IGNATOVICH KV LIFSHITS VG NUMATA T KUBO O TANI H KATAYAMA M OURA K
Citation
Aa. Saranin et al., NEW STRUCTURAL MODEL FOR THE SI(111)4X1 - IN RECONSTRUCTION, Applied surface science, 132, 1998, pp. 96-100
Citations number
19
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
132
Year of publication
1998
Pages
96 - 100
Database
ISI
SICI code
0169-4332(1998)132:<96:NSMFTS>2.0.ZU;2-6
Abstract
A new pi-bonded-chain-stacking-fault (pi-SF) model is proposed for the Si(111)4 X 1-In surface structure. The model incorporates 4 X 1 Si(11 1) substrate reconstruction consisting of the sixfold Si rings in the faulted-unfaulted sequence connected through fivefold and sevenfold Si rings. Indium atoms (0.75 monolayer) reside above sixfold and fivefol d Si rings, while sevenfold Si rings form pi-bonded chains between In ridges. (C) 1998 Elsevier Science B.V. All rights reserved.