THE ROLE OF (4 X-3) SURFACE RECONSTRUCTION INDUCED BY IN ADSORPTION FOR THE HETEROEPITAXIAL GROWTH OF INSB ON SI(001)-2X1 SURFACE

The structure of the In-terminated Si(001) surface has been observed b y reflection high-energy electron diffraction (RHEED), scanning tunnel ing microscopy (STM) and atomic force microscopy (AFM). The surface re construction induced by In of about 1 ML deposited on Si(001)-2 X 1 su rface at about 490 degrees C shows clearly a (4 X 3) double domain str ucture. In and Sb are co-deposited subsequently on the (4 X 3) surface as a function of growth temperature of 230-380 degrees C. Surface str ucture, morphology and crystal quality of the grown InSb films with ab out 9000 Angstrom are characterized by RHEED, scanning electron micros copy (SEM) and X-ray diffraction (XRD). For the deposition on the Si(0 01)-In(4 X 3) surface at a constant temperature between 230 degrees C and 280 degrees C, InSb(022) face grows parallel to the Si(001). For t he deposition at higher temperatures, the grown films are poly-crystal line. However, for the growth with a gradual increase in temperature f rom 280 to 380 degrees C, InSb(004) peak is observed in XRD pattern, s uggesting the growth of InSb films heteroepitaxially oriented to Si(00 1) surface. In contrast with the growth on In(4 X 3) surface, the dire ct growth on Si(001) surface without In(4 X 3) at 280 degrees C result s in the growth of poly-crystalline InSb. (C) 1998 Elsevier Science B. V. All rights reserved.