REACTIVITY OF O-2, WITH SI(111) SURFACES WITH DIFFERENT SURFACE-STRUCTURES

Authors
SHIMADA K ISHIMARU T KATSUBE S KAWADA H OHDOMARI I
Citation
K. Shimada et al., REACTIVITY OF O-2, WITH SI(111) SURFACES WITH DIFFERENT SURFACE-STRUCTURES, Applied surface science, 132, 1998, pp. 170-175
Citations number
20
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
132
Year of publication
1998
Pages
170 - 175
Database
ISI
SICI code
0169-4332(1998)132:<170:ROOWSS>2.0.ZU;2-J
Abstract
Reactivity of O-2 with Si(111) surfaces in which both 7 X 7 dimer-adat om-stacking fault (DAS) domains and unreconstructed '1 X 1' region coe xist, have been investigated. The change in surface morphology due to O-2 exposure has been monitored in-situ with high temperature STM. The acquired sequential images clearly show that the change due to oxidat ion preferentially takes place at such sites as '1 X 1' region, 7 X 7- '1 X 1' phase boundary and the missing adatom sites in a 7 X 7 domain, where adatoms have a space to displace upon oxidation. (C) 1998 Elsev ier Science B.V. All rights reserved.