HYDROGEN-TERMINATED SI(111) SURFACE STUDIED BY RHEED

Citation
Nl. Yakovlev et al., HYDROGEN-TERMINATED SI(111) SURFACE STUDIED BY RHEED, Applied surface science, 132, 1998, pp. 310-313
Citations number
14
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
132
Year of publication
1998
Pages
310 - 313
Database
ISI
SICI code
0169-4332(1998)132:<310:HSSSBR>2.0.ZU;2-O
Abstract
A hydrogen terminated Si(111) surface was prepared by etching in NH4F solution and investigated by quantitative analysis of reflection high energy electron diffraction data. The positions of the topmost silicon atoms were found to be very close to their bulk-like sites. Their dis placements can be estimated as -0.01 +/- 0.03 Angstrom for the top Si layer and -0.01 +/- 0.03 Angstrom for the second layer. (C) 1998 Elsev ier Science B.V. All rights reserved.