OPTICAL APPROACHES FOR CONTROLLING EPITAXIAL-GROWTH

Authors
Citation
De. Aspnes et N. Dietz, OPTICAL APPROACHES FOR CONTROLLING EPITAXIAL-GROWTH, Applied surface science, 132, 1998, pp. 367-376
Citations number
37
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
132
Year of publication
1998
Pages
367 - 376
Database
ISI
SICI code
0169-4332(1998)132:<367:OAFCE>2.0.ZU;2-X
Abstract
Optical spectroscopy of surface and near-surface regions has advanced to the stage where detailed measurements can be made and analyzed in r eal time. Here, we discuss reported and potential applications of opti cal probes for sample-driven closed-loop feedback control of semicondu ctor epitaxy. Parameters that have been controlled include temperature , thickness in both deposition and etching, and composition, including continuously graded compositions. Although considerable progress has been made, much remains to be done before these techniques become viab le production tools. (C) 1998 Elsevier Science B.V. All rights reserve d.