METALORGANIC MOLECULAR-BEAM EPITAXY ETCHING OF III-V SEMICONDUCTORS/

Citation
S. Gonda et al., METALORGANIC MOLECULAR-BEAM EPITAXY ETCHING OF III-V SEMICONDUCTORS/, Applied surface science, 132, 1998, pp. 377-381
Citations number
9
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
132
Year of publication
1998
Pages
377 - 381
Database
ISI
SICI code
0169-4332(1998)132:<377:MMEEOI>2.0.ZU;2-8
Abstract
Etching of GaSb by TDMASb is observed on the surface of GaSb and GaAs at appropriate temperatures (several hundred degrees C) in a MOMBE cha mber. RHEED intensity observation shows that the layer-by-layer mode e tching takes place. When Sb, is supplied simultaneously, the etching r ate decreases and the activation energy of etching increases. Etching reaction largely depends on surface coverage of Sb. Etching rate of Ga Sb by TDMASb was almost independent of crystal surface orientation. Wh en TEGa is supplied simultaneously with TDMASb, growth takes place and the growth rate on the (N11) surfaces (N = 5, 4, 3) was much higher c ompared with other surfaces. Grown samples indicate high crystal quali ty. BDMAAsCl also shows the etching effect on GaAs, InAs and GaSb. By using this etching effect, InAs quantum dot structures having no wetti ng layer were fabricated. (C) 1998 Elsevier Science B.V. All rights re served.