Etching of GaSb by TDMASb is observed on the surface of GaSb and GaAs
at appropriate temperatures (several hundred degrees C) in a MOMBE cha
mber. RHEED intensity observation shows that the layer-by-layer mode e
tching takes place. When Sb, is supplied simultaneously, the etching r
ate decreases and the activation energy of etching increases. Etching
reaction largely depends on surface coverage of Sb. Etching rate of Ga
Sb by TDMASb was almost independent of crystal surface orientation. Wh
en TEGa is supplied simultaneously with TDMASb, growth takes place and
the growth rate on the (N11) surfaces (N = 5, 4, 3) was much higher c
ompared with other surfaces. Grown samples indicate high crystal quali
ty. BDMAAsCl also shows the etching effect on GaAs, InAs and GaSb. By
using this etching effect, InAs quantum dot structures having no wetti
ng layer were fabricated. (C) 1998 Elsevier Science B.V. All rights re
served.