LOW-TEMPERATURE GAAS GROWN BY MOLECULAR-BEAM EPITAXY UNDER HIGH AS OVERPRESSURE - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY

Authors
SHEN A OHNO H HORIKOSHI Y GUO SP OHNO Y MATSUKURA F
Citation
A. Shen et al., LOW-TEMPERATURE GAAS GROWN BY MOLECULAR-BEAM EPITAXY UNDER HIGH AS OVERPRESSURE - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY, Applied surface science, 132, 1998, pp. 382-386
Citations number
12
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
132
Year of publication
1998
Pages
382 - 386
Database
ISI
SICI code
0169-4332(1998)132:<382:LGGBME>2.0.ZU;2-D
Abstract
Reflection high-energy electron diffraction (RHEED) was used for in si tu monitoring of the growth behavior of GaAs at various temperatures. The growth was performed on both singular and 2 degrees off (001) GaAs substrates. The temperature dependence as well as the As/Ga beam equi valent pressure ratio dependence of the RHEED specular beam intensity oscillation characteristics were studied. Strong RHEED oscillations we re observed at low temperatures under As/Ga ratios far from the stoich iometric condition. (C) 1998 Elsevier Science B.V. All rights reserved .