POLAR SURFACE DEPENDENCE OF EPITAXY PROCESSES - ZNSE ON GAAS(111)A, B-(2X2)

Authors
OHTAKE A MIWA S KUO LH KIMURA K YASUDA T JIN CG YAO T
Citation
A. Ohtake et al., POLAR SURFACE DEPENDENCE OF EPITAXY PROCESSES - ZNSE ON GAAS(111)A, B-(2X2), Applied surface science, 132, 1998, pp. 398-402
Citations number
18
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
132
Year of publication
1998
Pages
398 - 402
Database
ISI
SICI code
0169-4332(1998)132:<398:PSDOEP>2.0.ZU;2-E
Abstract
Thin films of ZnSe are heteroepitaxially grown on GaAs{111}A, B-(2 x 2 ) surfaces. On the GaAs(111)A-(2 x 2) surface ZnSe grows in a biatomic layer-by-layer mode. Interestingly, at the very initial stage of ZnSe growth on GaAs(111)A, the growth rate increases and decreases with in creasing Se to Zn flux ratio and ZnSe film thickness, respectively. On the other hand,. ZnSe growth on GaAs(111)B-(2 x 2) proceeds in an isl and mode regardless of the flux ratio. A possible mechanism for the on set of such different growth modes is discussed. (C) 1998 Elsevier Sci ence B.V. All rights reserved.