FABRICATION OF C-60 NANOSTRUCTURES BY SELECTIVE GROWTH ON GASE MOS2 AND INSE/MOS2 HETEROSTRUCTURE SUBSTRATES/

C-60 molecules were deposited on a submonolayer InSe film which was gr own on a MoS2 substrate. In the previous experiment on the growth of a C-60 thin film on a GaSe/MoS2 heterostructure, C-60 grew only on expo sed MoS2 regions and never nucleated on GaSe domains at substrate temp erature above 180 degrees C. In the present case, however, C-60 molecu les grow only on InSe domains and do not nucleate on the exposed MoS2 when the substrate temperature is higher than 80 degrees C. Using this method, C-60 domains whose dimension is smaller than 100 nm could be fabricated on each InSe domain. The selectivity of the C-60 growth is supposed to originate not from the surface morphology of those heteros tructures, but from the difference in adsorption energy and surface di ffusion energy of C-60 molecules on the surfaces of three different la yered materials and a C-60 film. (C) 1998 Elsevier Science B.V. All ri ghts reserved.