LEAKAGE CURRENT SPECTROSCOPY OF EPITAXIAL FERROELECTRIC SEMICONDUCTORHETEROSTRUCTURES AND THEIR MEMORY EFFECT/

Citation
Y. Watanabe et al., LEAKAGE CURRENT SPECTROSCOPY OF EPITAXIAL FERROELECTRIC SEMICONDUCTORHETEROSTRUCTURES AND THEIR MEMORY EFFECT/, Applied surface science, 132, 1998, pp. 682-688
Citations number
11
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
132
Year of publication
1998
Pages
682 - 688
Database
ISI
SICI code
0169-4332(1998)132:<682:LCSOEF>2.0.ZU;2-D
Abstract
The current through 3-dimensionally-aligned epitaxial BaTiO3/perovskit e-semiconductor heterostructures was measured down to fA by changing a pplied voltage and the ambient temperature. At low applied voltage, th e leakage current through the BaTiO3/hole-conduction-type semiconducto r was relaxation-dominated and symmetric with regard to bias polarity, while it exhibited an ohmic conduction in BaTiO3/electron-conduction- type semiconductor. The current exhibited reproducible memory effect a t a high forward bias which was sufficiently low to preserve insulatin g property. Similar current-voltage characteristics were found using a nano-scale electrode. By regarding the BaTiO3 as a semiconductor, the transient process of the band bending at BaTiO3 surface explains the above observations. (C) 1998 Elsevier Science B.V. All rights reserved .