Y. Watanabe et al., LEAKAGE CURRENT SPECTROSCOPY OF EPITAXIAL FERROELECTRIC SEMICONDUCTORHETEROSTRUCTURES AND THEIR MEMORY EFFECT/, Applied surface science, 132, 1998, pp. 682-688
Citations number
11
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
The current through 3-dimensionally-aligned epitaxial BaTiO3/perovskit
e-semiconductor heterostructures was measured down to fA by changing a
pplied voltage and the ambient temperature. At low applied voltage, th
e leakage current through the BaTiO3/hole-conduction-type semiconducto
r was relaxation-dominated and symmetric with regard to bias polarity,
while it exhibited an ohmic conduction in BaTiO3/electron-conduction-
type semiconductor. The current exhibited reproducible memory effect a
t a high forward bias which was sufficiently low to preserve insulatin
g property. Similar current-voltage characteristics were found using a
nano-scale electrode. By regarding the BaTiO3 as a semiconductor, the
transient process of the band bending at BaTiO3 surface explains the
above observations. (C) 1998 Elsevier Science B.V. All rights reserved
.