FORMATION OF SELF-ORGANIZED QUANTUM DOTS AT SEMICONDUCTOR SURFACES

Citation
D. Bimberg et al., FORMATION OF SELF-ORGANIZED QUANTUM DOTS AT SEMICONDUCTOR SURFACES, Applied surface science, 132, 1998, pp. 713-718
Citations number
40
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
ISSN journal
01694332
Volume
132
Year of publication
1998
Pages
713 - 718
Database
ISI
SICI code
0169-4332(1998)132:<713:FOSQDA>2.0.ZU;2-C
Abstract
Experimental results and theoretical concepts are reviewed for various mechanisms of self-organization of quantum dot-based nanostructures o n semiconductor surfaces, including formation of ordered structures of two-dimensional islands, formation of single-sheet and multi-sheet ar rays of three-dimensional islands in lattice-mismatched systems, and f ormation of quantum dots via phase separation of unstable alloys. Long -range elastic interaction is emphasized to be the common driving forc e for the formation of both equilibrium structures and kinetically con trolled structures. New results are reported on formation of quantum d ots due to phase separation of alloys both during the growth and via p ost-growth annealing. (C) 1998 Elsevier Science B.V. All rights reserv ed.