THE EFFECT OF SURFACE MODIFICATION ON THE FORMATION OF QUANTUM STRUCTURES IN HIGHLY MISMATCHED HETEROSTRUCTURES - INAS ON GAAS(100)

Authors
TOTSUKA H KURTZ E HANADA T ZHU Z YAO T
Citation
H. Totsuka et al., THE EFFECT OF SURFACE MODIFICATION ON THE FORMATION OF QUANTUM STRUCTURES IN HIGHLY MISMATCHED HETEROSTRUCTURES - INAS ON GAAS(100), Applied surface science, 132, 1998, pp. 742-746
Citations number
13
Categorie Soggetti
Physics, Applied","Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
Journal title
Applied surface science → ACNP
ISSN journal
01694332
Volume
132
Year of publication
1998
Pages
742 - 746
Database
ISI
SICI code
0169-4332(1998)132:<742:TEOSMO>2.0.ZU;2-4
Abstract
The effect of interface modification by insertion of Se layer on the f ormation of InAs dots on GaAs(001) is investigated by means of reflect ion high energy electron diffraction (RHEED) and atomic force microsco pe. The incorporation of a Se single layer into the interface is found to give rise to an extended critical thickness, presumably due to red uction of interface energy by the formation of Se-Ga/Se-In bonds. The reorganization of InAs supercritical 2D layers to form InAs dots on Se -treated GaAs(001) surface is reviewed by Anl images. (C) 1998 Elsevie r Science B.V. All rights reserved.